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Schottky Rectifier. VSSC520S Datasheet

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Schottky Rectifier. VSSC520S Datasheet






VSSC520S Rectifier. Datasheet pdf. Equivalent




VSSC520S Rectifier. Datasheet pdf. Equivalent





Part

VSSC520S

Description

Surface Mount Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSSC52 0S Vishay General Semiconductor Surfac e Mount Trench MOS Barrier Schottky Rec tifier FEATURES • Low profile package TMBS® • Ideal for automated place ment • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) .
Manufacture

Vishay

Datasheet
Download VSSC520S Datasheet


Vishay VSSC520S

VSSC520S; • Compliant to RoHS Directive 2002/95 /EC and in accordance to WEEE 2002/96/E C • Halogen-free according to IEC 612 49-2-21 definition TYPICAL APPLICATION S PRIMARY CHARACTERISTICS IF(AV) VRRM I FSM VF at IF = 5.0 A TJ max. 5.0 A 200 V 100 A 0.67 V 150 °C For use in high frequency converters, freewheeling dio des, DC/DC converters and polarity prot ection applications. M.


Vishay VSSC520S

ECHANICAL DATA Case: DO-214AB (SMC) Mold ing compound meets UL 94 V-0 flammabili ty rating Base P/N-M3 - halogen-free an d RoHS compliant, commercial grade Term inals: Matte tin plated leads, solderab le J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test P olarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise no.


Vishay VSSC520S

ted) PARAMETER Device marking code Maxim um repetitive peak reverse voltage Maxi mum DC forward current Peak forward sur ge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junctio n and storage temperature range VRRM IF IF (1) (2) SYMBOL VSSC520S V5D 200 5 .0 UNIT V A 2.2 100 10 000 - 40 to + 150 A V/μs °C IF.

Part

VSSC520S

Description

Surface Mount Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSSC52 0S Vishay General Semiconductor Surfac e Mount Trench MOS Barrier Schottky Rec tifier FEATURES • Low profile package TMBS® • Ideal for automated place ment • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) .
Manufacture

Vishay

Datasheet
Download VSSC520S Datasheet




 VSSC520S
www.DataSheet.co.kr
New Product
VSSC520S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS®
DO-214AB (SMC)
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
200 V
IFSM
100 A
VF at IF = 5.0 A
0.67 V
TJ max.
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
Notes
(1) Units mounted on PCB with 25 mm x 25 mm copper pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended PCB 1 oz. pad area
VSSC520S
V5D
200
5.0
2.2
100
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89318 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSSC520S
www.DataSheet.co.kr
New Product
VSSC520S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current per diode
Typical junction capacitance
IF = 5.0 A
VR = 180 V
VR = 200 V
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
CJ
1.19
0.67
2.0
2.0
4
3.2
280
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
1.70
0.75
-
-
200
25
-
UNIT
V
μA
mA
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC520S
Typical thermal resistance
RJA (1)
RJM (2)
95
9
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient
(2) Units mounted on PCB with 25 mm x 25 mm copper pad areas; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSSC520S-M3/57T
0.235
57T
VSSC520S-M3/9AT
0.235
9AT
BASE QUANTITY
850
3500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6
5
4
3
2
1
TM Measured at Terminal
0
0 25 50 75 100 125 150
TM - Mount Temperature (°C)
175
Fig. 1 - Maximum Forward Current Derating Curve
4.5
D = 0.5 D = 0.8
4 D = 0.3
3.5 D = 0.2
3.0
2.5 D = 0.1
D = 1.0
2.0
1.5 T
1.0
0.5
0
0
D = tp/T
tp
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89318
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 10-Nov-10
Datasheet pdf - http://www.DataSheet4U.net/




 VSSC520S
www.DataSheet.co.kr
New Product
VSSC520S
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
10
TA = 150 °C
1 TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
Junction to Ambient
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20) MIN.
0.185 (4.69) MAX.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.320 (8.13) REF.
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 89318 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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