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Standard Diodes. VSKD600 Datasheet

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Standard Diodes. VSKD600 Datasheet






VSKD600 Diodes. Datasheet pdf. Equivalent




VSKD600 Diodes. Datasheet pdf. Equivalent





Part

VSKD600

Description

Standard Diodes



Feature


www.DataSheet.co.kr VSKD600 Series Vish ay Semiconductors Standard Diodes, 600 A (SUPER MAGN-A-PAK Power Modules) FEA TURES • High current capability • H igh surge capability • High voltage r atings up to 2000 V • 3000 VRMS isola ting voltage with non-toxic substrate Industrial standard package • UL a pproved file E78996 • Compliant to Ro HS directive 2002/95/EC SUPER MA.
Manufacture

Vishay Siliconix

Datasheet
Download VSKD600 Datasheet


Vishay Siliconix VSKD600

VSKD600; GN-A-PAK TYPICAL APPLICATIONS • Recti fying bridge for large motor drives 600 A PRODUCT SUMMARY IF(AV) Type Modules - Diode, High Voltage • Rectifying bridge for large UPS MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTE RISTICS VALUES 600 TC 100 942 IF(RMS) T C 50 Hz IFSM 60 Hz 50 Hz 60 Hz I2t V RRM TStg, TJ Range Range 100 19 000 A 2 0 100 1805 1683 18 050 8.


Vishay Siliconix VSKD600

00 to 2000 - 40 to 150 kA2s V °C kA2 s UNITS A °C A °C I2t ELECTRICAL SP ECIFICATIONS VOLTAGE RATINGS TYPE NUMBE R VOLTAGE CODE 08 12 VSKD600.. 16 20 16 00 2000 1700 2100 VRRM, MAXIMUM REPETIT IVE PEAK REVERSE VOLTAGE V 800 1200 VRS M, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 50 IRRM MAXIMUM AT T J MAXIMUM mA Document Number: 93583 Re vision: 02-Jul-10 For .


Vishay Siliconix VSKD600

technical questions within your region, please contact one of the following: Di odesAmericas@vishay.com, DiodesAsia@vis hay.com, DiodesEurope@vishay.com www.v ishay.com 1 Datasheet pdf - http://www. DataSheet4U.net/ www.DataSheet.co.kr VSKD600 Series Vishay Semiconductors St andard Diodes, 600 A (SUPER MAGN-A-PAK Power Modules) FORWARD CONDUCTION PARA METER Maximum aver.

Part

VSKD600

Description

Standard Diodes



Feature


www.DataSheet.co.kr VSKD600 Series Vish ay Semiconductors Standard Diodes, 600 A (SUPER MAGN-A-PAK Power Modules) FEA TURES • High current capability • H igh surge capability • High voltage r atings up to 2000 V • 3000 VRMS isola ting voltage with non-toxic substrate Industrial standard package • UL a pproved file E78996 • Compliant to Ro HS directive 2002/95/EC SUPER MA.
Manufacture

Vishay Siliconix

Datasheet
Download VSKD600 Datasheet




 VSKD600
www.DataSheet.co.kr
VSKD600 Series
Vishay Semiconductors
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
FEATURES
• High current capability
• High surge capability
• High voltage ratings up to 2000 V
• 3000 VRMS isolating voltage with non-toxic substrate
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
SUPER MAGN-A-PAK
PRODUCT SUMMARY
IF(AV)
600 A
Type
Modules - Diode, High Voltage
TYPICAL APPLICATIONS
• Rectifying bridge for large motor drives
• Rectifying bridge for large UPS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
IF(RMS)
IFSM
I2t
I2t
VRRM
TStg, TJ
TC
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
Range
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VOLTAGE
TYPE NUMBER
CODE
VSKD600..
08
12
16
20
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
800
1200
1600
2000
VALUES
600
100
942
100
19 000
20 100
1805
1683
18 050
800 to 2000
- 40 to 150
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
1700
2100
UNITS
A
°C
A
°C
A
kA2s
kA2s
V
°C
IRRM MAXIMUM
AT TJ MAXIMUM
mA
50
Document Number: 93583 For technical questions within your region, please contact one of the following:
Revision: 02-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSKD600
www.DataSheet.co.kr
VSKD600 Series
Vishay Semiconductors
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
IF(RMS)
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
180° conduction, half sine wave at TC = 100 °C
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse
VALUES
600
100
942
19.0
20.1
16.2
17.2
1805
1683
1319
1230
18 050
0.70
0.77
0.28
0.25
1.45
UNITS
A
°C
A
kA
kA2s
kA2s
V
m
V
BLOCKING
PARAMETER
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
VINS
t=1s
TEST CONDITIONS
IRRM
TJ = TJ maximum, rated VRRM applied
VALUES
3000
50
UNITS
V
mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
TJ, TStg
RthJC
DC operation
RthC-hs
Mounting torque
± 10 %
SMAP to heatsink
busbar to SMAP
A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound.
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
- 40 to 150
UNITS
°C
0.065
0.02
K/W
6 to 8
12 to 15
Nm
1500
g
SUPER MAGN-A-PAK
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93583
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 02-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/




 VSKD600
www.DataSheet.co.kr
VSKD600 Series
Standard Diodes, 600 A
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.009
0.006
120°
0.011
0.011
90° 0.014
0.015
TJ = TJ maximum
K/W
60° 0.021
0.022
30° 0.037
0.038
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
150
VSKD600.. Series
140 R thJC (DC) = 0.065 K/W
130
120 Conduction Angle
110
100
90
80
0
60°
30° 90°
120°
180°
100 200 300 400 500 600 700
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
150
VSKD600.. Series
140 R thJC(DC) = 0.065 K/W
130
120 Conduction Period
110
100
90
80
0
60°
30° 90°
120°
180°
DC
200 400 600 800
Average Forward Current (A)
1000
Fig. 2 - Current Ratings Characteristics
700
180°
600
120°
90°
60°
500 30°
400 RMS Limit
300
200
100
0
0
Conduction Angle
VSKD600.. Series
Per Junction
TJ = 150°C
100 200 300 400 500 600
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
1000
900
800
700
600
DC
180°
120°
90°
60°
30°
500
RMS Limit
400
300
Conduction Period
200 VSKD600.. Series
Per Junction
100 TJ = 150°C
0
0 200 400 600 800 1000
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Document Number: 93583 For technical questions within your region, please contact one of the following:
Revision: 02-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






Recommended third-party VSKD600 Datasheet






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