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Stop IGBT. FGH40N60UFD Datasheet

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Stop IGBT. FGH40N60UFD Datasheet






FGH40N60UFD IGBT. Datasheet pdf. Equivalent




FGH40N60UFD IGBT. Datasheet pdf. Equivalent





Part

FGH40N60UFD

Description

Field Stop IGBT



Feature


FGH40N60UFD — 600 V, 40 A Field Stop I GBT November 2013 FGH40N60UFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A High Input Impedance • Fast Switch ing • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Micr owave Oven, Telecom, ESS General Descr iption Using novel field stop IG.
Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N60UFD Datasheet


Fairchild Semiconductor FGH40N60UFD

FGH40N60UFD; BT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC application s where low conduction and switching lo sses are essential. E C G COLLECTOR ( FLANGE) Absolute Maximum Ratings Symb ol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Volta ge Gate to Emitter .


Fairchild Semiconductor FGH40N60UFD

Voltage Collector Current Collector Curr ent Pulsed Collector Current Maximum Po wer Dissipation Maximum Power Dissipati on Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for solderin g Purposes, 1/8” from case for 5 seco nds Notes: 1: Repetitive rating: Pulse width limited by ma.


Fairchild Semiconductor FGH40N60UFD

x. junction temperature Thermal Characte ristics Symbol RJC(IGBT) RJC(Dio de) RJA Parameter Thermal Resistanc e, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, J unction to Ambient C G E Ratings 600 20 80 40 120 290 116 -55 to +150 -55 to +150 300 Typ. - Max. 0.43 1.45 40 Unit V V A A A W W oC oC oC Unit oC/W oC/W oC/W ©2008 Fairchil.

Part

FGH40N60UFD

Description

Field Stop IGBT



Feature


FGH40N60UFD — 600 V, 40 A Field Stop I GBT November 2013 FGH40N60UFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A High Input Impedance • Fast Switch ing • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Micr owave Oven, Telecom, ESS General Descr iption Using novel field stop IG.
Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N60UFD Datasheet




 FGH40N60UFD
March 2015
FGH40N60UFD
600 V, 40 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Tele-
com, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder, microwave oven, telecom, ESS and PFC applications
where low conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
20
30
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.43
1.45
40
Unit
V
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH40N60UFD Rev. 1.5
1
www.fairchildsemi.com




 FGH40N60UFD
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGH40N60UFDTU FGH40N60UFD TO-247
Tube
Reel Size
N/A
Tape Width Quantity
N/A 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
VGE = 0 V, IC = 250 A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 A, VCE = VGE
IC = 40 A, VGE = 15 V
ITCC==4102A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15
Inductive Load, TC =
V,
25oC
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15
Inductive Load, TC =
V,
125oC
VCE = 400 V, IC = 40 A,
VGE = 15 V
600 - - V
- 0.6 - V/oC
- - 250 A
-
-
±400
nA
4.0 5.0 6.5
- 1.8 2.4
- 2.0 -
V
V
V
- 2110 -
- 200 -
- 60 -
pF
pF
pF
- 24 - ns
- 44 - ns
- 112 -
ns
-
30 60
ns
- 1.19 -
mJ
- 0.46 -
mJ
- 1.65 -
mJ
- 24 - ns
- 45 - ns
- 120 -
ns
- 40 - ns
- 1.2 - mJ
- 0.69 -
mJ
- 1.89 -
mJ
- 120 -
nC
- 14 - nC
- 58 - nC
©2008 Fairchild Semiconductor Corporation
FGH40N60UFD Rev. 1.5
2
www.fairchildsemi.com




 FGH40N60UFD
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 20 A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IF =20 A, diF/dt = 200 A/s
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.95
1.85
45
140
75
375
Max
2.6
-
-
-
-
-
Unit
V
ns
nC
©2008 Fairchild Semiconductor Corporation
FGH40N60UFD Rev. 1.5
3
www.fairchildsemi.com






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