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Stop IGBT. FGH40N65UFD Datasheet

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Stop IGBT. FGH40N65UFD Datasheet






FGH40N65UFD IGBT. Datasheet pdf. Equivalent




FGH40N65UFD IGBT. Datasheet pdf. Equivalent





Part

FGH40N65UFD

Description

Field Stop IGBT

Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N65UFD Datasheet


Fairchild Semiconductor FGH40N65UFD

FGH40N65UFD; www.DataSheet.co.kr FGH40N65UFD 600V, 4 0A Field Stop IGBT March 2009 FGH40N6 5UFD 650V, 40A Field Stop IGBT Features • High current capability • Low sa turation voltage: VCE(sat) =1.8V @ IC = 40A • High input impedance • Fast switching • RoHS compliant tm Gener al Description Using Novel Field Stop I GBT Technology, Fairchild’s new sesri es of Field Stop IGBTs offer t.


Fairchild Semiconductor FGH40N65UFD

he optimum performance for Solar Inverte r, UPS, SMPS and PFC applications where low conduction and switching losses ar e essential. Applications • Solar In verter, UPS, SMPS, PFC E C G C G C OLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Em itter Voltage Gate to Emitter Voltage C ollector Current Col.


Fairchild Semiconductor FGH40N65UFD

lector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Tempera ture Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C o o Ratings 650 ± 20 80 40 120 290 116 -55 to +150 -55 to +150 30 0 Units V V A A A W .



Part

FGH40N65UFD

Description

Field Stop IGBT

Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N65UFD Datasheet




 FGH40N65UFD
www.DataSheet.co.kr
FGH40N65UFD
650V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Solar Inverter, UPS, SMPS, PFC
March 2009
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Solar Inverter, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
650
± 20
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.43
1.45
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH40N65UFD Rev. A1
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/





 FGH40N65UFD
www.DataSheet.co.kr
Package Marking and Ordering Information
Device Marking
Device
FGH40N65UFD FGH40N65UFDTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 40A,
VGE = 15V
650 - - V
- 0.6 - V/oC
- - 250 µA
-
-
±400
nA
4.0 5.0 6.5
- 1.8 2.4
- 2.0 -
V
V
V
- 2110 -
- 200 -
- 60 -
pF
pF
pF
- 24 - ns
- 44 - ns
- 112 -
ns
-
30 60
ns
- 1.19 -
mJ
- 0.46 -
mJ
- 1.65 -
mJ
- 24 - ns
- 45 - ns
- 120 -
ns
- 40 - ns
- 1.2 - mJ
- 0.69 -
mJ
- 1.89 -
mJ
- 120 -
nC
- 14 - nC
- 58 - nC
FGH40N65UFD Rev. A1
2
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/





 FGH40N65UFD
www.DataSheet.co.kr
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 20A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IES =20A, dIES/dt = 200A/µs
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.95
1.85
45
140
75
375
Max
2.6
-
-
-
-
-
Units
V
ns
nC
FGH40N65UFD Rev. A1
3
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/



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