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P-Channel MOSFET. SI4463BDY Datasheet

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P-Channel MOSFET. SI4463BDY Datasheet






SI4463BDY MOSFET. Datasheet pdf. Equivalent




SI4463BDY MOSFET. Datasheet pdf. Equivalent





Part

SI4463BDY

Description

P-Channel MOSFET



Feature


www.DataSheet.co.kr Si4463BDY New Produ ct Vishay Siliconix P-Channel 2.5-V ( G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS (on) (W) 0.011 @ VGS = −10 V −20 0. 014 @ VGS = −4.5 V 0.020 @ VGS = −2 .5 V ID (A) −13.7 −12.3 −10.3 S SO-8 S S S G 1 2 3 4 Top View Orderin g Information: Si4463BDY—E3 (Lead Fre e) Si4463BDY-T1—E3 (Lead Free with Ta pe and Reel) 8 7 6 5 D D D D G D P-.
Manufacture

Vishay

Datasheet
Download SI4463BDY Datasheet


Vishay SI4463BDY

SI4463BDY; Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Par ameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuou s Source Current (Diode Conduction)a Ma ximum Power Dissipationa Operating Junc tion and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Sy mbol VDS VGS ID ID.


Vishay SI4463BDY

M IS PD TJ, Tstg 10 secs Steady State −20 "12 Unit V −13.7 −11.1 −5 0 −2.7 3.0 1.9 −55 to 150 −9.8 7.9 A −1.36 1.5 0.95 W _C THERMAL RESISTANCE RATINGS Parameter M i Maxim um J Junction-to-Ambient ti t A bi ta M aximum Junction-to-Foot (Drain) Notes a . Surface Mounted on 1” x 1” FR4 Bo ard. Document Number: 72789 S-40433—R ev. A, 15-Mar-04 www.vishay.com t v 10 sec.


Vishay SI4463BDY

Steady State Steady State Symbol RthJA RthJF Typical 35 70 17 Maximum 42 84 21 Unit _C/W 1 Datasheet pdf - http ://www.DataSheet4U.net/ www.DataSheet. co.kr Si4463BDY Vishay Siliconix New P roduct SPECIFICATIONS (TJ = 25_C UNLES S OTHERWISE NOTED) Parameter Static Gat e Threshold Voltage Gate-Body Leakage Z ero Gate Voltage Drain Current On-State Drain Currenta VG.

Part

SI4463BDY

Description

P-Channel MOSFET



Feature


www.DataSheet.co.kr Si4463BDY New Produ ct Vishay Siliconix P-Channel 2.5-V ( G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS (on) (W) 0.011 @ VGS = −10 V −20 0. 014 @ VGS = −4.5 V 0.020 @ VGS = −2 .5 V ID (A) −13.7 −12.3 −10.3 S SO-8 S S S G 1 2 3 4 Top View Orderin g Information: Si4463BDY—E3 (Lead Fre e) Si4463BDY-T1—E3 (Lead Free with Ta pe and Reel) 8 7 6 5 D D D D G D P-.
Manufacture

Vishay

Datasheet
Download SI4463BDY Datasheet




 SI4463BDY
www.DataSheet.co.kr
New Product
Si4463BDY
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.011 @ VGS = 10 V
20 0.014 @ VGS = 4.5 V
0.020 @ VGS = 2.5 V
ID (A)
13.7
12.3
10.3
S
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4463BDY—E3 (Lead Free)
Si4463BDY-T1—E3 (Lead Free with Tape and Reel)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
13.7
9.8
11.1
7.9
50
2.7
1.36
3.0 1.5
1.9 0.95
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
35
70
17
Maximum
42
84
21
Unit
_C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 SI4463BDY
www.DataSheet.co.kr
Si4463BDY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VGS = 10 V, ID = 13.7 A
VGS = 4.5 V, ID = 12.3 A
VGS = 2.5 V, ID = 5 A
VDS = 10 V, ID = 13.7 A
IS = 2.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 13.7 A
f = 1 MHz
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
IF = 2.3 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6
30
1.4
"100
1
10
0.0085
0.010
0.015
44
0.7
0.011
0.014
0.020
1.1
V
nA
mA
A
W
S
V
37 56
8.7 nC
11
2.7 W
35 55
60 90
115 170 ns
75 115
50 75
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 2.5 V
40
30
2V
20
10
0
0
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2
1.5 V
1234
VDS Drain-to-Source Voltage (V)
5
50
40
30
20
10
0
0.0
Transfer Characteristics
TC = 125_C
25_C
55_C
0.5 1.0 1.5 2.0
VGS Gate-to-Source Voltage (V)
2.5
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
Datasheet pdf - http://www.DataSheet4U.net/




 SI4463BDY
www.DataSheet.co.kr
New Product
Si4463BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04
5000
Capacitance
0.03
0.02
0.01
VGS = 2.5 V
VGS = 4.5 V
VGS = 10 V
0.00
0
10 20 30 40 50
ID Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 13.7 A
4
3
2
1
0
0 5 10 15 20 25 30 35 40
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
TJ = 150_C
10
4000
3000
Ciss
2000
1000
0
0
Coss
Crss
4
8
12 16 20
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
VGS = 10 V
1.3 ID = 13.7 A
1.2
1.1
1.0
0.9
0.8
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
ID = 5 A
0.04
0.03
ID = 13.7 A
TJ = 25_C
0.02
0.01
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD Source-to-Drain Voltage (V)
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
0.00
0
1234567
VGS Gate-to-Source Voltage (V)
8
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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