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N-Channel MOSFET. SI4464DY Datasheet

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N-Channel MOSFET. SI4464DY Datasheet






SI4464DY MOSFET. Datasheet pdf. Equivalent




SI4464DY MOSFET. Datasheet pdf. Equivalent





Part

SI4464DY

Description

N-Channel MOSFET



Feature


www.DataSheet.co.kr Si4464DY New Produc t Vishay Siliconix N-Channel 200-V (D -S) MOSFET PRODUCT SUMMARY VDS (V) 200 FEATURES ID (A) 2.2 2.1 rDS(on) (W) 0.240 @ VGS = 10 V 0.260 @ VGS = 6.0 V D TrenchFETr Power MOSFET D PWM Optimi zed for (Lowest Qg and Low RG) APPLICA TIONS D Primary Side Switch D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET .
Manufacture

Vishay

Datasheet
Download SI4464DY Datasheet


Vishay SI4464DY

SI4464DY; G ABSOLUTE MAXIMUM RATINGS (TA = 25_C U NLESS OTHERWISE NOTED) Parameter Drain- Source Voltage Gate-Source Voltage Cont inuous Drain Current (TJ = 150_C)a Puls ed Drain Current Single Avalanch Curren t Single Avalanch Energy Continuous Sou rce Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1.


Vishay SI4464DY

mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 200 "20 2.2 Steady State Uni t V 1.7 1.3 8 3 0.45 mJ 1.2 1.5 0.9 -5 5 to 150 W _C A A ID IDM IAS EAS IS PD TJ, Tstg 1.7 2.1 2.5 1.6 THERMAL RE SISTANCE RATINGS Parameter t v 10 sec M aximum Junction-to-Ambienta Maximum Jun ction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Docum ent Number: 72051 S-22.


Vishay SI4464DY

099—Rev. A, 02-Dec-02 www.vishay.com S teady State Steady State RthJA RthJF S ymbol Typical 37 68 17 Maximum 50 85 21 Unit _C/W 1 Datasheet pdf - http: //www.DataSheet4U.net/ www.DataSheet.c o.kr Si4464DY Vishay Siliconix New Pro duct SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zer o Gate Voltage Drain.

Part

SI4464DY

Description

N-Channel MOSFET



Feature


www.DataSheet.co.kr Si4464DY New Produc t Vishay Siliconix N-Channel 200-V (D -S) MOSFET PRODUCT SUMMARY VDS (V) 200 FEATURES ID (A) 2.2 2.1 rDS(on) (W) 0.240 @ VGS = 10 V 0.260 @ VGS = 6.0 V D TrenchFETr Power MOSFET D PWM Optimi zed for (Lowest Qg and Low RG) APPLICA TIONS D Primary Side Switch D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET .
Manufacture

Vishay

Datasheet
Download SI4464DY Datasheet




 SI4464DY
www.DataSheet.co.kr
New Product
Si4464DY
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.240 @ VGS = 10 V
0.260 @ VGS = 6.0 V
ID (A)
2.2
2.1
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for (Lowest Qg and Low RG)
APPLICATIONS
D Primary Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Single Avalanch Current
Single Avalanch Energy
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
200
"20
2.2 1.7
1.7 1.3
8
3
0.45
2.1 1.2
2.5 1.5
1.6 0.9
-55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
37
68
17
Maximum
50
85
21
Unit
_C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 SI4464DY
www.DataSheet.co.kr
Si4464DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 2.2 A
VGS = 6.0 V, ID = 2.1 A
VDS = 15 V, ID = 2.2 A
IS = 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 100 V, VGS = 10 V, ID = 2.2 A
VDD = 100 V, RL = 100 W
ID ^ 1.0 A, VGEN = 10 V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0 4 V
"100
nA
1
mA
5
8A
0.195
0.210
8.0
0.8
0.240
0.260
1.2
W
S
V
12 18
2.5 nC
3.8
2.5 W
10 15
12 20
15 25 ns
15 25
60 90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
VGS = 10 thru 5 V
6
Transfer Characteristics
8
6
4
2
0
0
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2
4V
3V
246
VDS - Drain-to-Source Voltage (V)
8
4
TC = 125_C
2
25_C
-55 _C
0
0123456
VGS - Gate-to-Source Voltage (V)
Document Number: 72051
S-22099Rev. A, 02-Dec-02
Datasheet pdf - http://www.DataSheet4U.net/




 SI4464DY
www.DataSheet.co.kr
New Product
Si4464DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.4
800
Capacitance
0.3
VGS = 6 V
0.2
Ciss
600
400
VGS = 10 V
0.1
0.0
0246
ID - Drain Current (A)
Gate Charge
10
VDS = 100 V
ID = 2.2 A
8
8
200
Crss
Coss
0
0 20 40 60 80
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
VGS = 10 V
ID = 2.2 A
2.0
6 1.5
4 1.0
2 0.5
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
0.0
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.5
TJ = 150_C
1
TJ = 25_C
0.1
0.0
0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
1.0
Document Number: 72051
S-22099Rev. A, 02-Dec-02
0.4
0.3
0.2
0.1
0.0
0
ID = 2.2 A
2468
VGS - Gate-to-Source Voltage (V)
10
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3
Datasheet pdf - http://www.DataSheet4U.net/






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