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N-Channel MOSFET. SI4484EY Datasheet

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N-Channel MOSFET. SI4484EY Datasheet






SI4484EY MOSFET. Datasheet pdf. Equivalent




SI4484EY MOSFET. Datasheet pdf. Equivalent





Part

SI4484EY

Description

N-Channel MOSFET



Feature


www.DataSheet.co.kr Si4484EY Vishay Sil iconix N-Channel 100-V (D-S) MOSFET P RODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.034 @ VGS = 10 V 0.040 @ VGS = 6.0 V ID (A) 6.9 6.4 D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si448 4EY Si4484EY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABS OLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) .
Manufacture

Vishay

Datasheet
Download SI4484EY Datasheet


Vishay SI4484EY

SI4484EY; Parameter Drain-Source Voltage Gate-Sour ce Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanc he Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Curr ent (Diode Maximum Power Dissipationa O perating Junction and Storage Temperatu re Range Conduction)a TA = 25_C TA = 85 _C L = 0.1 0 1 mH TA = 25_C TA = 85_C Symbol VDS VGS 10.


Vishay SI4484EY

secs 100 "20 6.9 Steady State Unit V 4.8 3.7 30 25 31 mJ 1.5 1.8 1.1 - 55 t o 175 W _C A A ID IDM IAR EAR IS PD TJ , Tstg 5.4 3.1 3.8 2.3 THERMAL RESIS TANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) No tes a. Surface Mounted on 1” x 1” F R4 Board. Document Number: 71189 S-0395 1—Rev. C, 26-May-03 ww.


Vishay SI4484EY

w.vishay.com Steady State Steady State R thJA RthJF Symbol Typical 33 70 17 M aximum 40 85 21 Unit _C/W 1 Datashee t pdf - http://www.DataSheet4U.net/ ww w.DataSheet.co.kr Si4484EY Vishay Sili conix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zer o Gate Voltage Drain Current On-State D rain Currenta Drai.

Part

SI4484EY

Description

N-Channel MOSFET



Feature


www.DataSheet.co.kr Si4484EY Vishay Sil iconix N-Channel 100-V (D-S) MOSFET P RODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.034 @ VGS = 10 V 0.040 @ VGS = 6.0 V ID (A) 6.9 6.4 D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si448 4EY Si4484EY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABS OLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) .
Manufacture

Vishay

Datasheet
Download SI4484EY Datasheet




 SI4484EY
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Si4484EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.034 @ VGS = 10 V
0.040 @ VGS = 6.0 V
ID (A)
6.9
6.4
D
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4484EY
Si4484EY-T1 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
L = 0.1 mH
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IAR
EAR
IS
PD
TJ, Tstg
100
"20
6.9 4.8
5.4 3.7
30
25
31
3.1 1.5
3.8 1.8
2.3 1.1
- 55 to 175
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71189
S-03951—Rev. C, 26-May-03
Symbol
RthJA
RthJF
Typical
33
70
17
Maximum
40
85
21
Unit
_C/W
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Datasheet pdf - http://www.DataSheet4U.net/




 SI4484EY
www.DataSheet.co.kr
Si4484EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 6.9 A
VGS = 6.0 V, ID = 6.4 A
VDS = 15 V, ID = 6.9 A
IS = 3.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 50 V, VGS = 10 V, ID = 6.9 A
VDD = 50 V, RL = 50 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 3.1 A, di/dt = 100 A/ms
Min Typ Max Unit
2V
"100
nA
1
mA
20
30 A
0.028
0.032
25
0.8
0.034
0.040
1.2
W
S
V
24 30
7.6 nC
5.4
0.5 1.25 2.2
W
16 30
10 20
35 70 ns
20 40
50 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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2
Output Characteristics
VGS = 10 thru 6 V
5V
4V
1234
VDS - Drain-to-Source Voltage (V)
5
Transfer Characteristics
30
24
18
12
6
0
0
TC = 150_C
25_C
- 55_C
12345
VGS - Gate-to-Source Voltage (V)
6
Document Number: 71189
S-03951—Rev. C, 26-May-03
Datasheet pdf - http://www.DataSheet4U.net/




 SI4484EY
www.DataSheet.co.kr
Si4484EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
2500
Capacitance
0.04
0.03
0.02
VGS = 6.0 V
VGS = 10 V
2000
1500
1000
Ciss
0.01
0.00
0
6 12 18 24
ID - Drain Current (A)
Gate Charge
10
VDS = 50 V
ID = 6.9 A
8
30
500 Crss
Coss
0
0 10 20 30 40 50 60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.4
VGS = 10 V
ID = 6.9 A
2.0
6 1.6
4 1.2
2 0.8
0
0 5 10 15 20 25
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
TJ = 175_C
10
TJ = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 71189
S-03951—Rev. C, 26-May-03
0.4
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
ID = 6.9 A
0.03
0.02
0.01
0.00
0
2468
VGS - Gate-to-Source Voltage (V)
10
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Datasheet pdf - http://www.DataSheet4U.net/






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