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2SC3264 Data Sheet

Silicon NPN Transistor

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2SC3264
LAPT 2SC3264 Application : Audio and General Purpose (Ta=25°C) 2SC3264 100max 100max 230min 50min∗ 2.0max 60typ 250typ V MHz pF 20.0min 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3264 230 230 5 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=230V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(50 to 100), Y(70 to 140) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.30typ tstg (µs) 2.40typ tf (µs) 0.50typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characterist.
2SC3264

Download 2SC3264 Datasheet
LAPT 2SC3264 Application : Audio and General Purpose (Ta=25°C) 2SC3264 100max 100max 230min 50min∗ 2.0max 60typ 250typ V MHz pF 20.0min 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3264 230 230 5 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=230V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(50 to 100), Y(70 to 140) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.30typ tstg (µs) 2.40typ tf (µs) 0.50typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 3 A .0 0 2. A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =4V) 17 15 17 A 1.5 1.0 60 15 A 0mA Collector Current I C (A) 400m 10 A 2 Collector Current I C (A) 200m A 10 p) em 10 0m A ˚C ( 50mA I B =20mA 0 5A 0 0 0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 25˚C –30˚C 125 1 (Cas 5 I C =10A 5 Cas 1 e Te eT mp) 2 3 Collector-Emitter Voltage V C .


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