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2SC3334

Part Number	2SC3334
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Triple Diffused TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3334 2SC3334 High-Voltage Switching Applications ...
Datasheet	2SC3334 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3334 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications Unit: mm • High breakdown voltage: VCEO = 250 V • Low Cre: 1.
8 pF (max) • Complementary to 2SA1321 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 250 250 5 50 100 20 0.
9 150 −55 to 150 V V V mA mA W °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note: Using continuously under he...

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