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SW4N60A Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part | SW4N60A |
|---|---|
| Description | N-Channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN SW4N60A N-c hannel MOSFET BVDSS : 600V ID : 4. 0A RD S(ON) : 2. 2ohm 1 2 1 3 2 2 Features ■High ruggedness ■RDS(ON) (Max 2. 2 Ω)@VGS=10V ■Gate Charge (Typ 25nC) ■Improved dv/dt Capability ■100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General D escription This power MOSFET is produce d with advanced VDMOS technology of SAM WIN. This technology enable power MOSFE T to have better characteristics, such as fast switching time, low on resistan ce, low gate charge and especially exce llent avalanche characteristics. This p ower MOSFET is usually use . |
| Manufacture | Samwin |
| Datasheet |
| Part | SW4N60A |
|---|---|
| Description | N-Channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN SW4N60A N-c hannel MOSFET BVDSS : 600V ID : 4. 0A RD S(ON) : 2. 2ohm 1 2 1 3 2 2 Features ■High ruggedness ■RDS(ON) (Max 2. 2 Ω)@VGS=10V ■Gate Charge (Typ 25nC) ■Improved dv/dt Capability ■100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General D escription This power MOSFET is produce d with advanced VDMOS technology of SAM WIN. This technology enable power MOSFE T to have better characteristics, such as fast switching time, low on resistan ce, low gate charge and especially exce llent avalanche characteristics. This p ower MOSFET is usually use . |
| Manufacture | Samwin |
| Datasheet |
　
　
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