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CEJ8218 Datasheet, Equivalent, Effect Transistor.

Dual N-Channel Enhancement Mode Field Effect Transistor

Dual N-Channel Enhancement Mode Field Effect Transistor

 

 

 

Part CEJ8218
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature www.
DataSheet.
co.
kr Dual N-Channel Enha ncement Mode Field Effect Transistor FE ATURES 20V, 6.
5A, RDS(ON) = 23mΩ @VGS = 4.
5V.
RDS(ON) = 34mΩ @VGS = 2.
5V.
Super High dense cell design for extrem ely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
S1 *Typical value by desig n G1 *1K D CEJ8218 D G2 *1K S2 D 8 D 7 D 6 D 5 2928-8J 1 2 3 4 S 1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS Pa rameter Drain-Source Voltage Gate-Sourc e Voltage Drain Current-Continuous Drai n Current-Pulsed a TA = 25 C unless ot herwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 U .
Manufacture CET
Datasheet
Download CEJ8218 Datasheet
Part CEJ8218
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature www.
DataSheet.
co.
kr Dual N-Channel Enha ncement Mode Field Effect Transistor FE ATURES 20V, 6.
5A, RDS(ON) = 23mΩ @VGS = 4.
5V.
RDS(ON) = 34mΩ @VGS = 2.
5V.
Super High dense cell design for extrem ely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
S1 *Typical value by desig n G1 *1K D CEJ8218 D G2 *1K S2 D 8 D 7 D 6 D 5 2928-8J 1 2 3 4 S 1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS Pa rameter Drain-Source Voltage Gate-Sourc e Voltage Drain Current-Continuous Drai n Current-Pulsed a TA = 25 C unless ot herwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 U .
Manufacture CET
Datasheet
Download CEJ8218 Datasheet

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