Dual N-Channel Enhancement Mode Field Effect Transistor
Description
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Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
S1 *Typical value by design G1 *1K D
CEJ8218
D
G2
*1K
S2
D 8
D 7
D 6
...
