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CEK01N65 Datasheet, Equivalent, Effect Transistor.N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor |
| Part | CEK01N65 |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Feature | www. DataSheet. co. kr N-Channel Enhanceme nt Mode Field Effect Transistor FEATURE S 650V, 0. 35A, RDS(ON) = 10. 5 Ω @VGS = 10V. High dense cell design for extre mely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bu lk) & TO-92(Ammopack) package. CEK01N6 5 PRELIMINARY D G G D G S D TO-92( Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Curre nt-Continuous Drain Current-Pulsed a T A = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 650 Uni ts V V A A W C ±30 0. 35 1. 4 3. 1 -55 t o 150 Maximum Po . |
| Manufacture | CET |
| Datasheet |
| Part | CEK01N65 |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Feature | www. DataSheet. co. kr N-Channel Enhanceme nt Mode Field Effect Transistor FEATURE S 650V, 0. 35A, RDS(ON) = 10. 5 Ω @VGS = 10V. High dense cell design for extre mely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bu lk) & TO-92(Ammopack) package. CEK01N6 5 PRELIMINARY D G G D G S D TO-92( Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Curre nt-Continuous Drain Current-Pulsed a T A = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 650 Uni ts V V A A W C ±30 0. 35 1. 4 3. 1 -55 t o 150 Maximum Po . |
| Manufacture | CET |
| Datasheet |
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