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CEK01N65 Datasheet, Equivalent, Effect Transistor.

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

 

 

 

Part CEK01N65
Description N-Channel Enhancement Mode Field Effect Transistor
Feature www.
DataSheet.
co.
kr N-Channel Enhanceme nt Mode Field Effect Transistor FEATURE S 650V, 0.
35A, RDS(ON) = 10.
5 Ω @VGS = 10V.
High dense cell design for extre mely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bu lk) & TO-92(Ammopack) package.
CEK01N6 5 PRELIMINARY D G G D G S D TO-92( Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Curre nt-Continuous Drain Current-Pulsed a T A = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 650 Uni ts V V A A W C ±30 0.
35 1.
4 3.
1 -55 t o 150 Maximum Po .
Manufacture CET
Datasheet
Download CEK01N65 Datasheet
Part CEK01N65
Description N-Channel Enhancement Mode Field Effect Transistor
Feature www.
DataSheet.
co.
kr N-Channel Enhanceme nt Mode Field Effect Transistor FEATURE S 650V, 0.
35A, RDS(ON) = 10.
5 Ω @VGS = 10V.
High dense cell design for extre mely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bu lk) & TO-92(Ammopack) package.
CEK01N6 5 PRELIMINARY D G G D G S D TO-92( Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Curre nt-Continuous Drain Current-Pulsed a T A = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 650 Uni ts V V A A W C ±30 0.
35 1.
4 3.
1 -55 t o 150 Maximum Po .
Manufacture CET
Datasheet
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