P-Channel Enhancement Mode Field Effect Transistor
Description
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P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8
CEM2401
D 7
D 6
D 5
SO-8 1
1 S
2 S
3 S
4 G
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