Preliminary Datasheet
RJK1052DPB
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
R07DS0083EJ0102 (Previous: REJ03G1769-0101) Rev.1.02 Jul 30, 2010
Low on-resistance RDS(on) = 15 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Packa...
