Preliminary Datasheet
RJK1054DPB
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ. (at VGS = 10 V)
R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.2.00 Aug 17, 2010
Pb-free Halogen-free High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A (Packa...
