Preliminary Datasheet
RJK6012DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching REJ03G1581-0200 Rev.2.00 Jun 30, 2010
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
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