Preliminary Datasheet
RJP30E2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.2.00 Apr 12, 2011
Outline
RENESAS Pa...
