Preliminary Datasheet
RJH60F4DPQ-A0
600 V - 30 A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 ...
