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RJH1BF6RDPQ-80

Part Number	RJH1BF6RDPQ-80
Manufacturer	Renesas
Description	High Speed Power Switching
Published	Jul 20, 2012
Detailed Description	Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonan...
Datasheet	RJH1BF6RDPQ-80 PDF File

Overview

Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ.
(at IC = 30 A, VGE = 15 V, Tj = 25°C) • Gate to emitter voltage rating ±30 V • Pb-free lead plating R07DS0393EJ0100 Rev.
1.
00 May 16, 2011 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current T...

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RJH1BF6RDPQ-80 High Speed Power Switching - Renesas

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