Preliminary Datasheet
RJH60M3DPQ-A0
600 V - 17 A - IGBT Application: Inverter
Features
Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching ...
