2N5551 mplifier Transistors Datasheet

2N5551 Datasheet, PDF, Equivalent


Part Number

2N5551

Description

mplifier Transistors

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download 2N5551 Datasheet


2N5551
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2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Symbol
2N5550
2N5551
VCEO
Value
140
160
Unit
Vdc
Collector − Base Voltage
VCBO
Vdc
2N5550
160
2N5551
180
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
6.0 Vdc
600 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
555x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1
x = 0 or 1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5550/D

2N5551
2N5550, 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
V(BR)CEO
140
160
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
2N5550
2N5551
V(BR)CBO
160
180
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
V(BR)EBO
6.0
Vdc
2N5550
2N5551
2N5550
2N5551
ICBO
− 100 nAdc
− 50
− 100 mAdc
− 50
IEBO
− 50 nAdc
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
hFE
60 −
80 −
60 250
80 250
20 −
30 −
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Both Types
2N5550
2N5551
VCE(sat)
− 0.15 Vdc
− 0.25
− 0.20
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Both Types
− 1.0 Vdc
2N5550
− 1.2
2N5551
− 1.0
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N5550
2N5551
fT
Cobo
Cibo
100 300
− 6.0
− 30
− 20
MHz
pF
pF
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
2N5550
2N5551
hfe
NF
50 200
− 10
− 8.0
dB
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2


Features www.DataSheet4U.com 2N5550, 2N5551 Pref erred Device Amplifier Transistors NPN Silicon Features • These are Pb−F ree Devices* http://onsemi.com COLLECT OR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage 2N5550 2N5551 Colle ctor − Base Voltage 2N5550 2N5551 Emi tter − Base Voltage Collector Current − Continuous Total Device Dissipatio n @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junc tion Temperature Range VEBO IC PD PD TJ , Tstg VCBO 160 180 6.0 600 625 5.0 1.5 12 −55 to +150 Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 1 12 1 Symbol VCEO 140 160 Vdc Value Unit Vdc 1 EMITTER 2 BASE 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PAC K 2 THERMAL CHARACTERISTICS Character istic Thermal Resistance, Junction−to −Ambient Thermal Resistance, Junction −to−Case Symbol RqJA RqJC Max 200 8 3.3 Unit °C/W °C/W 2N 555x AYWW G G MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are s.
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