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STRH8N10

STMicroelectronics
Part Number STRH8N10
Manufacturer STMicroelectronics
Description 6A N-channel Power MOSFET
Published Oct 31, 2012
Detailed Description STRH8N10 Datasheet Rad-Hard 100 V, 6 A, N-channel Power MOSFET 2 1 3 SMD.5 D(3) G(1) S(2) SC3015C Product status l...
Datasheet PDF File STRH8N10 PDF File

STRH8N10
STRH8N10

Overview
STRH8N10 Datasheet Rad-Hard 100 V, 6 A, N-channel Power MOSFET 2 1 3 SMD.
5 D(3) G(1) S(2) SC3015C Product status link STRH8N10 Features VDS 100 V ID RDS(on) typ.
Qgtyp.
6A 0.
27 Ω 18.
5 nC • Fast switching • 100 % avalanche tested • Hermetic package • 50 krad TID • SEE radiation hardened Description The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure.
It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).
Qualified as per ESCC detail specification No.
5205/023 and available in SMD.
5 hermetic package it is specifically recommended for space and harsh e...


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