DatasheetsPDF.com

MGF4963BL

Mitsubishi Electric Semiconductor
Part Number MGF4963BL
Manufacturer Mitsubishi Electric Semiconductor
Description Low Noise GaAs HEMT
Published Nov 1, 2012
Detailed Description < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT (...
Datasheet PDF File MGF4963BL PDF File

MGF4963BL
MGF4963BL

Overview
< Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin.
= 0.
70dB (Typ.
) High associated gain @ f=20GHz Gs = 13.
5dB (Typ.
) Fig.
1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V, ID=10mA ORDERRING INFORMATION Tape & reel 4000pcs.
/reel www.
DataSheet.
net/ RoHS COMPLIANT MGF4963BL is a RoHS compliant product.
RoHS compliance is indicated by the l...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)