Specifications are subject to change without notice.
MGFS36E3436A is a GaAs RF amplifier designed
for WiMAX CPE.
• InGaP HBT Device
• 6V Operation
• 30dB Linear Gain
• 2.5% EVM at an Output power of 25dBm
• 4% EVM at an Output power of 27dBm
• Integrated Output Power Detector
• Integrated 1-bit 21dB Step Attenuator
• 50Ω Matched Input/Output Ports
• Surface Mount Package
• RoHS Compliant Package
FUNCTIONAL BLOCK DIAGRAM
3.4-3.6GHz HBT HYBRID IC
10 9 8 7 6
(X-ray Top View)
2 Vc (Vcb)
3 Vc (Vc1)
4 Vc (Vc2)
5 Vc (Vc3)
DIM IN mm
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
Datasheet pdf - http://www.DataSheet4U.co.kr/