DatasheetsPDF.com

2N3583

Part Number	2N3583
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 30, 2012
Detailed Description	INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION ·Contunuous Col...
Datasheet	2N3583 PDF File

Overview

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.
0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Jun...

Similar Datasheet

2N3500 NPN Transistor - Semicoa Semiconductor
2N3500 GENERAL PURPOSE TRANSISTOR - Boca Semiconductor Corporation
2N3500 NPN SILICON PLANAR RF TRANSISTORS - CDIL
2N3500 NPN SILICON SWITCHING TRANSISTOR - Microsemi
2N3500 GENERAL PURPOSE TRANSISTOR - Motorola
2N3500L NPN Transistor - Semicoa Semiconductor
2N3500L NPN SILICON SWITCHING TRANSISTOR - Microsemi
2N3501 GENERAL PURPOSE TRANSISTOR - Boca Semiconductor Corporation
2N3501 NPN SILICON PLANAR RF TRANSISTORS - CDIL
2N3501 NPN SILICON SWITCHING TRANSISTOR - Microsemi

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)