POWER TRANSISTORS. BD131 Datasheet

BD131 Datasheet PDF, Equivalent


Part Number

BD131

Description

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

Manufacture

Comset Semiconductors

Total Page 2 Pages
PDF Download
Download BD131 Datasheet PDF


BD131 Datasheet
NPN BD131
SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD131are NPN transistors mounted in Jedec TO-126 plastic package.
Medium power applications.
PNP complements are BD132
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IB
PT
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Reverse base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Value
45
45
4
IC
ICM
IBM
www.DataSheet.net/
IBM
@ Tmb = 60°C
3
6
0.5
0.5
15
150
-65 to +150
Unit
V
V
V
A
A
W
°C
°C
Symbol
Ratings
RthJ-mb Thermal Resistance, Junction to mouting base
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE
Collector cut-off current
IE=0 , VCB=40 V
IE=0 , VCB=40 V ,Tj= 150°C
Emitter cut-offcurrent
IC=0, VEB=3 V
Collector-Emitter saturation IC=0.5 A, IB=50 mA
Voltage
IC=2.0 A, IB=200 mA
Base-Emitter saturation IC=0.5 A, IB=50 mA
Voltage
IC=2.0 A, IB=200 mA
DC Current Gain
VCE=12 V, IC=500m A
VCE=1 V, IC=2 A
Value
6
Unit
K/W
Min Typ Max Unit
-
-
-
-
5
500
µA
- - 5 µA
-
-
-
-
0.3
1.2
V
-
-
-
-
0.7
1,5
V
40 -
-
20 -
-
18/10/2012
COMSET SEMICONDUCTORS
1|2
Datasheet pdf - http://www.DataSheet4U.co.kr/

BD131 Datasheet
NPN BD131
MECHANICAL DATA CASE TO-126
DIMENSIONS
min max
A 7.4
7.8
B 10.5
10.8
C 2.4
2.7
D 0.7
0.9
E 2.25 typ.
F 0.49
0.75
G 4.4 typ.
L 15.7 typ.
M 1.27 typ.
N 3.75 typ.
P 3.0
3.2
S 2.54 typ.
Pin 1 :
Pin 2 :
Pin 3 :
Emitter
Collector
Base
www.DataSheet.net/
Revised September 2012
         
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to
change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not
authorized for use as critical components in life support devices or systems.
 
www.comsetsemi.com
info@comsetsemi.com
18/10/2012
COMSET SEMICONDUCTORS
2|2
Datasheet pdf - http://www.DataSheet4U.co.kr/


Features Datasheet pdf NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD131are NPN transisto rs mounted in Jedec TO-126 plastic pack age. Medium power applications. PNP com plements are BD132 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO V CBO VEBO IC IB PT TJ TStg Ratings Coll ector-Emitter Voltage Collector-Base Vo ltage Emitter-Base Voltage Collector Cu rrent Base current (peak value) Reverse base current (peak value) Total power Dissipation Junction Temperature Storag e Temperature IC ICM IBM IBM @ Tmb = 60 °C Value 45 45 4 3 6 0.5 0.5 15 150 - 65 to +150 Unit V V V A A W °C °C w ww.DataSheet.net/ THERMAL CHARACTERIST ICS Symbol RthJ-mb Ratings Thermal Res istance, Junction to mouting base Valu e 6 Unit K/W ELECTRICAL CHARACTERISTI CS TC=25°C unless otherwise noted Sym bol ICBO IEBO VCE(SAT) VBE(SAT) hFE Ra tings Collector cut-off current Test C ondition(s) Min 40 20 Typ - Max 5 50 0 5 0.3 1.2 0.7 1,5 - Unit µA µA V V IE=0 , VCB=40 V IE=0 , VCB=40 V ,Tj= 150°C Emitter cut-offcurrent I.
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