2N6193 PNP Transistor Datasheet

2N6193 Datasheet, PDF, Equivalent


Part Number

2N6193

Description

PNP Transistor

Manufacture

Semicoa Semiconductor

Total Page 2 Pages
Datasheet
Download 2N6193 Datasheet


2N6193
Type 2N6193
Geometry 9700
Polarity PNP
Qual Level: JAN - JANTXV
Features:
Silicon transistor for use in switch-
ing applications.
Housed in a TO-39 case.
Also available in chip form using
the 9700 chip geometry.
The Min and Max limits shown are
per MIL-PRF-19500/561 which
Semicoa meets in all cases.
Data Sheet No. 2N6193
Generic Part Number:
2N6193
REF: MIL-PRF-19500/561
TO-39
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Collector-Emitter Voltage
Symbol
VCEO
Rating
100
Collector-Base Voltage
VCBO
100
Emitter-Base Voltage
VEBO
6.0
Collector Current, Continuous
IC 5.0
Base Current, Continuous
Power Disipation TA = 25oC ambient
Derate above 25oC
Power Disipation TA = 25oC ambient
Derate above 25oC
Operating Junction Temperature
IB 1.0
PT 1.0
5.71
PT
10.0
57.1
TJ -55 to +200
Storage Temperature
TSTG
-55 to +200
Unit
V
V
V
A
A
W
mW/oC
Watt
mW/oC
oC
oC

2N6193
Data Sheet No. 2N6193
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Emitter Breakdown Voltage
IC = 50 mA, pulsed
V(BR)CEO
100
Collector-Base Cutoff Current
VCB = 100 V
ICBO ---
Base-Emitter Cutoff Current
VEB = 6 V
IEBO ---
VEB = 5.5 V, IC = 0
Collector-Emitter Cutoff Current
IEBO2
---
VCE = 100 V
ICEO ---
VCE = 90 V, VBE = 1.5 V
ICEX1
---
VCE = 90 V, VBE = 1.5 V, TA = +150oC
ICEX2
---
ON Characteristics
Forward Current Transfer Ratio
IC = 0.5 A, VCE = 2.0 V, pulsed
IC = 2.0 A, VCE = 2.0 V, pulsed
IC = 5.0 A, VCE = 2.0 V, pulsed
IC = 2.0 A, VCE = 2.0 V pulsed, TC = -55oC
Base-Emitter Saturation Voltage
IC = 2.0 A, IB = 0.2 A, pulsed
IC = 5.0 A, IB = 0.5 A, pulsed
Collector-Emitter Saturation Voltage
IC = 2.0 A, IB = 0.2 A, pulsed
IC = 5.0 A, IB = 0.5 A, pulsed
Symbol
hFE1
hFE2
hFE3
hFE4
VBE(sat)1
VBE(sat)2
VCE(sat)1
VCE(sat)2
Min
60
60
40
12
---
---
---
---
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 5 V, IC = 0.5 A, f = 10 MHz
Input Capacitance, Output Open Circuited
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Symbol
|hfe|
CIBO
COBO
Min
3.0
---
---
Switching Time
Delay Time
Per figure 5, MIL-PRF-19500/561B
Rise Time
Per figure 5, MIL-PRF-19500/561B
Storage Time
Per figure 5, MIL-PRF-19500/561B
Fall Time
Per figure 5, MIL-PRF-19500/561B
Symbol
td
tr
ts
tf
Min
---
---
---
---
Max
---
10
100
1.0
100
10
1.0
Max
---
240
---
---
1.2
1.8
0.7
1.2
Max
15
1250
300
Max
100
100
2
200
Unit
V
µA
µA
mA
µA
µA
mA
Unit
---
---
---
---
V dc
V dc
V dc
V dc
Unit
---
pF
pF
Unit
ns
ns
ns
ns


Features Data Sheet No. 2N6193 Type 2N6193 Geome try 9700 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • Silic on transistor for use in switching appl ications. Housed in a TO-39 case. Also available in chip form using the 9700 c hip geometry. The Min and Max limits sh own are per MIL-PRF-19500/561 which Sem icoa meets in all cases. Generic Part Number: 2N6193 REF: MIL-PRF-19500/561 TO-39 Maximum Ratings TC = 25 C unles s otherwise specified o Rating Collect or-Emitter Voltage Collector-Base Volta ge Emitter-Base Voltage Collector Curre nt, Continuous Base Current, Continuous Power Disipation TA = 25oC ambient Der ate above 25oC Power Disipation TA = 25 oC ambient o Derate above 25 C Operatin g Junction Temperature Storage Temperat ure Symbol VCEO VCBO VEBO IC IB PT PT TJ TSTG Rating 100 100 6.0 5.0 1.0 1.0 5.71 10.0 57.1 -55 to +200 -55 to +200 Unit V V V A A W mW/oC Watt o mW/ C o C C o Data Sheet No. 2N6193 Electr ical Characteristics TC = 25 C unless otherwise specified o OFF Charac.
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