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POWER MOSFET. AP9561AGI-HF Datasheet

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POWER MOSFET. AP9561AGI-HF Datasheet






AP9561AGI-HF MOSFET. Datasheet pdf. Equivalent




AP9561AGI-HF MOSFET. Datasheet pdf. Equivalent





Part

AP9561AGI-HF

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP9561AGI-HF Halogen-Free Product Advan ced Power Electronics Corp. ā–¼ Low Gat e Charge ā–¼ Simple Drive Requirement ā –¼ Fast Switching Characteristic ā–¼ Ro HS Compliant & Halogen-Free G P-CHANNE L ENHANCEMENT MODE POWER MOSFET D BVDS S RDS(ON) ID -40V 18mĪ© -30A S Descr iption AP9561A series are from Advanced Power innovated design and silicon pro cess technology to achieve .
Manufacture

Advanced Power Electronics

Datasheet
Download AP9561AGI-HF Datasheet


Advanced Power Electronics AP9561AGI-HF

AP9561AGI-HF; the lowest possible onresistance and fas t switching performance. It provides th e designer with an extreme efficient de vice for use in a wide range of power a pplications. The TO-220CFM package is w idely preferred for all commercialindus trial through hole applications. The mo ld compound provides a high isolation v oltage capability and low thermal resis tance between the .


Advanced Power Electronics AP9561AGI-HF

tab and the external heat-sink. G D S TO-220CFM(I) Absolute Maximum Ratings http://www.DataSheet4U.net/ Symbol VD S VGS ID@TC=25ā„ƒ ID@TC=100ā„ƒ IDM PD@T C=25ā„ƒ PD@TA=25ā„ƒ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltag e Continuous Drain Current, VGS @ 10V C ontinuous Drain Current, VGS @ 10V Puls ed Drain Current 1 Rating -40 +20 -30 -19 -120 29.7 1.92 -55 to .


Advanced Power Electronics AP9561AGI-HF

150 -55 to 150 Units V V A A A W W ā„ƒ ā„ƒ Total Power Dissipation Total Powe r Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Param eter Maximum Thermal Resistance Junctio n-case Maximum Thermal Resistance, Junc tion-ambient Value 4.2 65 Units ā„ƒ/W ā „ƒ/W 1 201301141 datasheet pdf - http:/ /www.DataSheet4U.net/ Dat.

Part

AP9561AGI-HF

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP9561AGI-HF Halogen-Free Product Advan ced Power Electronics Corp. ā–¼ Low Gat e Charge ā–¼ Simple Drive Requirement ā –¼ Fast Switching Characteristic ā–¼ Ro HS Compliant & Halogen-Free G P-CHANNE L ENHANCEMENT MODE POWER MOSFET D BVDS S RDS(ON) ID -40V 18mĪ© -30A S Descr iption AP9561A series are from Advanced Power innovated design and silicon pro cess technology to achieve .
Manufacture

Advanced Power Electronics

Datasheet
Download AP9561AGI-HF Datasheet




 AP9561AGI-HF
Advanced Power
Electronics Corp.
AP9561AGI-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
ā–¼ Low Gate Charge
D
ā–¼ Simple Drive Requirement
ā–¼ Fast Switching Characteristic
ā–¼ RoHS Compliant & Halogen-Free
G
S
Description
AP9561A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
Absolute Maximum Ratings
Symbol
Parameter
http://www.DataSheet4U.net/
VDS
VGS
ID@TC=25ā„ƒ
ID@TC=100ā„ƒ
IDM
PD@TC=25ā„ƒ
PD@TA=25ā„ƒ
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
-40V
18mĪ©
-30A
G
D
S
TO-220CFM(I)
Rating
-40
+20
-30
-19
-120
29.7
1.92
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
ā„ƒ
ā„ƒ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
4.2
65
Units
ā„ƒ/W
ā„ƒ/W
1
201301141
datasheet pdf - http://www.DataSheet4U.net/




 AP9561AGI-HF
AP9561AGI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=-250uA
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-15A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-20A
VDS=-32V, VGS=0V
VGS=+20V, VDS=0V
ID=-20A
VDS=-32V
VGS=-4.5V
VDS=-20V
ID=-20A
RG=3.3Ī©
VGS=-10V
VGS=0V
VDS=-25V
http://www.DataSheet4U.net/
f=1.0MHz
f=1.0MHz
-40 - - V
- - 18 mĪ©
- - 26 mĪ©
-1 - -3 V
- 31 -
S
- - -10 uA
- - +100 nA
- 27 43 nC
- 7 - nC
- 14 - nC
- 10 - ns
- 46 - ns
- 66 - ns
- 90 - ns
- 3000 4800 pF
- 300 - pF
- 230 - pF
- 5.5 11 Ī©
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-20A, VGS=0V
IS=-10A, VGS=0V,
dI/dt=100A/Āµs
Min. Typ. Max. Units
- - -1.2 V
- 30 - ns
- 30 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
datasheet pdf - http://www.DataSheet4U.net/




 AP9561AGI-HF
AP9561AGI-HF
160
T C = 25 o C
-10V
-7.0 V
-6.0 V
120 -5.0 V
V G = - 4.0 V
80
40
0
0 4 8 12 16
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
120
T C = 150 o C
100
80
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
60
40
20
0
0 2 4 6 8 10 12
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
22
I D = -15 A
T C =25 o C
20
18
16
14
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
2.0
I D = -20A
1.8 V G = -10V
1.6
1.4
1.2
http://www.DataSheet4U.net/
1.0
0.8
0.6
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I D = -250uA
1.6
12
T j =150 o C
8
T j =25 o C
1.2
0.8
4 0.4
0
0.2 0.4 0.6 0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
datasheet pdf - http://www.DataSheet4U.net/






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