High Voltage Power MOSFET
IXTT1N450HV IXTH1N450HV
VDSS I
D25
RDS(on)
= 4500V = 1A 80
N-Channel Enhancement Mode
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD
FC Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
4500
V
4500
V
20
V
30
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
1
A
3
A
TC = 25C
520
W
- 55 ... +150
C
150
C
- 55 ... +150
C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Force (TO-263HV) Mounting Torque (TO-247HV)
10..65 / 22..14.6 1.13/10
N/lb Nm/lb.in
TO-263HV TO-247HV
2.5
g
6.0
g
TO-268HV (IXTT)
G S D (Tab)
TO-247HV (IXTH)
G S D
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
High Blocking Voltage High Voltage Package
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = 3.6kV, VGS = 0V.