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K10A50D

Toshiba
Part Number K10A50D
Manufacturer Toshiba
Description TK10A50D
Published Aug 6, 2013
Detailed Description TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications ...
Datasheet PDF File K10A50D PDF File

K10A50D
K10A50D

Overview
TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.
62 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 5.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 10 40 45 264 10 4.
5 150 −55 to 150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C)...


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