(Datasheet) K10A50D PDF





K10A50D Datasheet - TK10A50D

K10A50D   K10A50D  

Search Keywords: K10A50D, datasheet, pdf, Toshiba, TK10A50D, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applicat ions • • • • Low drain-source O N-resistance: RDS (ON) = 0.62 Ω (typ. ) High forward transfer admittance: ⎪ Yfs⎪ = 5.0 S (typ.) Low leakage curre nt: IDSS = 10 μA (max) (VDS = 500 V) E nhancement mode: Vth = 2.0 to 4.0 V (VD S = 10 V, ID = 1 mA) Unit: mm Absolute Maximu

K10A50D Datasheet - TK10A50D

K10A50D   K10A50D  
m Ratings (Ta = 25°C) Characteristics D rain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rat ing 500 ±30 10 40 45 264 10 4.5 150 55 to 150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V Pulse (t = 1 ms) (Note 1) Drain power dissipatio n (Tc = 25°C) Single pulse avalanche e nergy (Note 2) Avalanche current Re








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)