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SSS6N90A
Advanced Power MOSFET
Description
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 1.829 Ω (Typ.) SSS6N90A BVDSS = 900 V RDS(on) = 2.3 Ω ID = 3.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating...
Fairchild Semiconductor
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