Silicon Transistor. 2SA1883 Datasheet

2SA1883 Transistor. Datasheet pdf. Equivalent

Part 2SA1883
Description PNP Epitaxial Planar Silicon Transistor
Feature Ordering number:4660A PNP Epitaxial Planar Silicon Transistor 2SA1883 High-Speed Switching Applicat.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SA1883 Datasheet

Ordering number:4660A PNP Epitaxial Planar Silicon Transist 2SA1883 Datasheet
Recommendation Recommendation Datasheet 2SA1883 Datasheet




2SA1883
Ordering number:4660A
PNP Epitaxial Planar Silicon Transistor
2SA1883
High-Speed Switching Applications
Features
· Fast switching speed.
· Low collector saturatio voltage.
· High gain-bandwidth product.
· Small collector capacitance.
· Very small-sized package permitting 2SA1883-
applied sets to be made small and slim.
· Complementary pair with the 2SC4987.
Package Dimensions
unit:mm
2106A
[2SA1883]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT*
Cob*
VCE(sat)
VBE(sat)
VCB=–8V, IE=0
VEB=–3V, IC=0
VCE=–1V, IC=–10mA
VCE=–10V, IC=–10mA
VCB=–5V, f=1MHz
IC=–10mA, IB=–1mA
IC=–10mA, IB=–1mA
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
Ratings
–15
–15
–5
–200
–500
–40
150
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ
50 80
450 1000
1.8
–0.07
–0.80
max
–0.1
–0.1
140
3.0
–0.20
–0.90
Unit
µA
µA
MHz
pF
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/81094MT BX-1673, BX-0842 No.4660–1/4



2SA1883
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Turn-OFF Time
Marking : HA
2SA1883
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
toff
IC=–10µA, IE=0
IC=–1mA, RBE=
IE=–10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
Ratings
min typ
–15
–15
–5
11
21
19
max
Unit
V
V
V
ns
ns
ns
No.4660–2/4





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