P-Channel MOSFET. DMG3415U Datasheet

DMG3415U MOSFET. Datasheet pdf. Equivalent

DMG3415U Datasheet
Recommendation DMG3415U Datasheet
Part DMG3415U
Description P-Channel MOSFET
Feature DMG3415U; NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Su.
Manufacture Diodes
Datasheet
Download DMG3415U Datasheet




Diodes DMG3415U
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
DMG3415U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-20V
RDS(ON) max
42.5m@ VGS = -4.5V
71m@ VGS = -1.8V
ID
TA = +25°C
-4.0A
-2.0A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
SOT23
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
D
G
ESD PROTECTED TO 3kV
Top View
GS
Top View
Internal Schematic
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
Compliance
Case
Packaging
DMG3415U-7
Standard
SOT23
3,000/Tape & Reel
DMG3415UQ-7
Automotive
SOT23
3,000/Tape & Reel
DMG3415U-13
Standard
SOT23
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
Code
2018
F
Month
Code
Jan Feb
12
DMG3415U
Document number: DS31735 Rev. 13 - 3
34P = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
2019
G
Mar
3
2020
H
2021
I
Apr May Jun
456
Jul
7
1 of 7
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2022
J
Aug
8
Sep
9
2023
K
Oct
O
2024
L
Nov Dec
ND
March 2018
© Diodes Incorporated



Diodes DMG3415U
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
DMG3415U
Value
-20
±8
-4.0
-3.5
-30
Unit
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
0.9
139
32
-55 to +150
Unit
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
-20
VGS(TH)
RDS(ON)
|gFS|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
-0.3
Typ
-0.55
31
40
51
3
294
104
25
250
9.1
1.5
1.7
71
117
795
393
Max
-1
±10
-1.0
42.5
53
71
Notes:
6. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -20V, VGS = 0V
µA VGS = ±8.0V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -3.5A
VGS = -1.8V, ID = -2.0A
S VDS = -5V, ID = -4A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V
ID = -4A
nC
ns
ns VDS = -10V, VGS = -4.5V,
ns RD = 2.5Ω, RG = 3.0Ω, ID = -1A
ns
DMG3415U
Document number: DS31735 Rev. 13 - 3
2 of 7
www.diodes.com
March 2018
© Diodes Incorporated



Diodes DMG3415U
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2045U
DMG3415U
20
16
NT()A
RE 12
R
U
C
N
RAI 8
D
,
I
D
4
VGS = -4.5V
VGS = -3.5V
VGS = -3.0V
VGS = -2.5V
VGS = -2.0V
VGS = -1.5V
0
0
) 0.08
C(E 0.07
N
TA
ESIS 0.06
R
N-
0.05
O
CE 0.04
R
U
O
S 0.03
N-
RAI 0.02
D
, N)
O
RDS(
0.01
0
0
1.6
1234
VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
VGS = -2.5V
VGS = -4.5V
4 8 12 16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
5
20
D)
CE
R
U
O
S
N-
RAI
D
,N
O
RDS
E
ALIZ
M
R
O
N
CE(
N
ESISTA
R
1.4
1.2
1.0
N-
O
0.8
VGS = -4.5V
ID = -10A
VGS = -2.5V
ID = -5A
0.6
-50 -25
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
20
16
NT(A)
RE 12
R
U
C
N
RAI 8
D
,
I
D
4
0
0.5
VDS = -5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1 1.5 2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
2.5
) 0.08
CE(
N
0.07
STA
RESI
0.06
N- 0.05
O
CE
R
0.04
U
O
N-S 0.03
RAI
D
0.02
, )N
O
0.01
(S
RD 0
0
VGS = -4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
4 8 12 16
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
) 0.08
CE( 0.07
N
STA
RESI
N-
0.06
0.05
O
CE 0.04
R
U
O
N-S
0.03
RAI 0.02
D
,N
O
RDS
0.01
0
-50
VGS = -2.5V
ID = -5A
VGS = -4.5V
ID = -10A
-25 0 25 50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG3415U
Document number: DS31735 Rev. 13 - 3
3 of 7
www.diodes.com
March 2018
© Diodes Incorporated





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