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DMN3112S

TY Semiconductor
Part Number DMN3112S
Manufacturer TY Semiconductor
Description N-Channel MOSFET
Published Sep 16, 2013
Detailed Description Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ ...
Datasheet PDF File DMN3112S PDF File

DMN3112S
DMN3112S

Overview
Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.
5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.
008 grams (approxima...


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