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AP30G120ASW

Advanced Power Electronics
Part Number AP30G120ASW
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 27, 2013
Detailed Description AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Vo...
Datasheet PDF File AP30G120ASW PDF File

AP30G120ASW
AP30G120ASW

Overview
AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp.
Features ▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.
9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
VCES IC C G C E TO-3P G E Parameter Rating 1200 +30 60 30 120 6 40 208 -55 to 150 -55 to 150 300 1200V 30A Absolute Maximum Ratings Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Diode Continunous Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temper...


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