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RJK6002DPH-E0

MOS FET

Description

Preliminary Datasheet RJK6002DPH-E0 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS1047EJ0100 Rev.1.00 Mar 21, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain D...

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RJK6002DPH-E0 MOS FET - Renesas

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