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RJK6032DPH-E0

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MOS FET


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Preliminary Datasheet RJK6032DPH-E0 600V - 3A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0993EJ0100 Rev.1.00 Jan 23, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain ...



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RJK6032DPH-E0

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