2SC6125
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6125
High-Speed Switching Applications Power Amplifier Applications
High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Unit : mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base ...
