40N60A4D HGT1N40N60A4D Datasheet

40N60A4D Datasheet, PDF, Equivalent


Part Number

40N60A4D

Description

HGT1N40N60A4D

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
Datasheet
Download 40N60A4D Datasheet


40N60A4D
Data Sheet
HGT1N40N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N40N60A4D
SOT-227
40N60A4D
NOTE: When ordering, use the entire part number.
Features
• 100kHz Operation At 390V, 22A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
E
Packaging
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/

40N60A4D
HGT1N40N60A4D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Noted
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage, Any Terminal To Case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .VISOL
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
HGT1N40N60A4D
600
110
45
300
±20
±30
200A at 600V
298
2.3
2500
-55 to 150
1.5
1.7
UNITS
V
A
A
A
V
V
W
W/oC
V
oC
N-m
N-m
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Diode Forward Voltage
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
VEC
IC = 250µA, VGE = 0V
VCE = BVCES
TJ = 25oC
TJ = 125oC
IC = 40A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 2.2Ω, VGE = 15V
L = 100µH, VCE = 600V
IC = 40A, VCE = 0.5 BVCES
IC = 40A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 40A
VCE = 0.65 BVCES
VGE =15V
RG = 2.2
L = 200µH
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG= 2.2
L = 200µH
Test Circuit (Figure 24)
IEC = 40A
MIN TYP MAX UNITS
600 - - V
- - 250 µA
- - 3.0 mA
- 1.7 2.7
V
- 1.5 2.0
V
4.5 5.6
7
V
-
-
±250
nA
200 - - A
- 8.5
-
V
- 350 405 nC
- 450 520 nC
- 25
-
ns
- 18
-
ns
- 145
-
ns
- 35
-
ns
- 400
-
µJ
- 850
-
µJ
- 370
-
µJ
- 27
-
ns
- 20
-
ns
- 185 225 ns
- 55 95 ns
- 400
-
µJ
- 1220 1400 µJ
- 660 775 µJ
- 2.25 2.7
V
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/


Features HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with A nti-Parallel Hyperfast Diode The HGT1N4 0N60A4D is a MOS gated high voltage swi tching device combining the best featur es of a MOSFET and a bipolar transistor . These devices have the high input imp edance of a MOSFET and the low on-state conduction loss of a bipolar transisto r. The much lower on-state voltage drop varies only moderately between 25oC an d 150oC. This IGBT is ideal for many hi gh voltage switching applications opera ting at high frequencies where low cond uction losses are essential. This devic e has been optimized for high frequency switch mode power supplies. Formerly D evelopmental Type TA49349. Features 100kHz Operation At 390V, 22A • 600 V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC • Low Conduct ion Loss Symbol C G Ordering Informa tion PART NUMBER HGT1N40N60A4D PACKAGE SOT-227 BRAND 40N60A4D E Packaging JEDEC STYLE SOT-227B GATE EMITTER .
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