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2SC2712GT1G

Part Number	2SC2712GT1G
Manufacturer	ON Semiconductor
Description	Medium Frequency NPN Amplifier Transistor
Published	Oct 29, 2013
Detailed Description	2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium...
Datasheet	2SC2712GT1G PDF File

Overview

2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys.
The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications.
Features http://onsemi.
com COLLECTOR 3 • • • • • Lower VCE(sat)* Higher Gain (hfe)* Higher Breakdown Voltage Rating* Moisture Sensitivity Level: 1 This is a Pb−Free Device 2 BASE 1 EMITTER Benefits • Longer Battery Life • Improved Performance Through Targeted Design MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) IB Value 60 50 5.
0 150 200 30 Unit Vdc Vdc Vdc mAdc mAdc mAdc 3 2 1 SC−59 CASE 318D STYLE 1 MARKING DIAGRAMS SCG M SCG = Specific Date Code M = Date Code THERMAL CHARACTERISTICS Characteristic Power Dissipation...

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2SC2712GT1G Medium Frequency NPN Amplifier Transistor - ON Semiconductor

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