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2SC3123

Part Number	2SC3123
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Oct 29, 2013
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3123 DESCRIPTION ·High Conversion Gain Gce = 23dB TYP. ·Low Re...
Datasheet	2SC3123 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3123 DESCRIPTION ·High Conversion Gain Gce = 23dB TYP.
·Low Reverse Transfer Capacitance Cre = 0.
4pF TYP.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV VHF mixer applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 25 mA 0.
15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：w...

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