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2SC3355 Datasheet, Equivalent, RF Transistor.Silicon NPN RF Transistor Silicon NPN RF Transistor |
| Part | 2SC3355 |
|---|---|
| Description | Silicon NPN RF Transistor |
| Feature | isc Silicon NPN RF Transistor
DESCRIPTI ON ·Low Noise
NF = 1. 5dB TYP @ VCE=10V ，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9. 5dB TYP @ VCE=10V，IC= 20mA，f=1GHz ·Minimum Lot-to-Lot vari ations for robust device performance an d reliable operation APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial tr ansistor designed for low noise amplifi er at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VCBO Collector-B ase Voltage 20 V VCEO Collector-Emi tter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-C ontinuous Pc Collector Power Di . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SC3355 |
|---|---|
| Description | Silicon NPN RF Transistor |
| Feature | isc Silicon NPN RF Transistor
DESCRIPTI ON ·Low Noise
NF = 1. 5dB TYP @ VCE=10V ，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9. 5dB TYP @ VCE=10V，IC= 20mA，f=1GHz ·Minimum Lot-to-Lot vari ations for robust device performance an d reliable operation APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial tr ansistor designed for low noise amplifi er at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VCBO Collector-B ase Voltage 20 V VCEO Collector-Emi tter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-C ontinuous Pc Collector Power Di . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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