isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise
NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial transistor
designed for low noise amplifier at VHF, UHF and CATV b...
