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2SC3355 Datasheet, Equivalent, RF Transistor.

Silicon NPN RF Transistor

Silicon NPN RF Transistor

 

 

 

Part 2SC3355
Description Silicon NPN RF Transistor
Feature isc Silicon NPN RF Transistor DESCRIPTI ON ·Low Noise NF = 1.
5dB TYP @ VCE=10V ,IC=7mA, f=1GHz
•High Power Gain ︱S21e︱2 = 9.
5dB TYP @ VCE=10V,IC= 20mA,f=1GHz ·Minimum Lot-to-Lot vari ations for robust device performance an d reliable operation APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial tr ansistor designed for low noise amplifi er at VHF, UHF and CATV band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VCBO Collector-B ase Voltage 20 V VCEO Collector-Emi tter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-C ontinuous Pc Collector Power Di .
Manufacture Inchange Semiconductor
Datasheet
Download 2SC3355 Datasheet
Part 2SC3355
Description Silicon NPN RF Transistor
Feature isc Silicon NPN RF Transistor DESCRIPTI ON ·Low Noise NF = 1.
5dB TYP @ VCE=10V ,IC=7mA, f=1GHz
•High Power Gain ︱S21e︱2 = 9.
5dB TYP @ VCE=10V,IC= 20mA,f=1GHz ·Minimum Lot-to-Lot vari ations for robust device performance an d reliable operation APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial tr ansistor designed for low noise amplifi er at VHF, UHF and CATV band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VCBO Collector-B ase Voltage 20 V VCEO Collector-Emi tter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-C ontinuous Pc Collector Power Di .
Manufacture Inchange Semiconductor
Datasheet
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2SC3355

2SC3355
2SC3355

2SC3355

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