AON6405L P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications.
Features
VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) < 7mΩ (VGS = -10V) RDS(ON) < 8m...
