Planar Transistor. 2N3903 Datasheet

2N3903 Transistor. Datasheet pdf. Equivalent

Part 2N3903
Description NPN Silicon Epitaxial Planar Transistor
Feature .
Manufacture Semtech Corporation
Datasheet
Download 2N3903 Datasheet



2N3903
ST 2N3903 / 2N3904
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary types the PNP transistors
2N3905 and 2N3906 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
Value
60
40
6
200
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/03/2007



2N3903
ST 2N3903 / 2N3904
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
hFE 20
-
hFE 40
-
hFE 35
-
hFE 70
-
hFE 50 150
hFE 100 300
hFE 30
-
hFE 60
-
hFE 15
-
hFE 30
-
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 6 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VCEsat
-
-
60
40
6
-
-
50
50
-
-
-
0.2
0.3
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 5 V, f = 100 KHz
Emitter Base Capacitance
at VEB = 0.5 V, f = 100 KHz
Thermal Resistance Junction to Ambient
2N3903
2N3904
VBEsat
VBEsat
fT
fT
Ccb
Ceb
RthA
- 0.85
- 0.95
250 -
300 -
-4
-8
- 250 1)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
-
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
pF
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/03/2007





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