NPN Amplifier. 2N3903 Datasheet

2N3903 Amplifier. Datasheet pdf. Equivalent

2N3903 Datasheet
Recommendation 2N3903 Datasheet
Part 2N3903
Description NPN Amplifier
Feature 2N3903; 2N3903 Discrete POWER & Signal Technologies 2N3903 C BE TO-92 NPN General Purpose Amplifier Th.
Manufacture Fairchild Semiconductor
Datasheet
Download 2N3903 Datasheet




Fairchild Semiconductor 2N3903
2N3903
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 23. See 2N3904 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
6.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N3903
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation



Fairchild Semiconductor 2N3903
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICEX
z
IBL
Collector Cutoff Current
Base Cutoff Current
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 30 V, VOB = 3.0 V
VCE = 30 V, VOB = 3.0 V
40 V
60 V
6.0 V
50 nA
50 nA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 0.1 mA
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 50 mA
VCE = 1.0 V, IC = 100 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
20
35
50 150
30
15
0.2
0.3
0.65 0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance
Cib Input Capacitance
hfe Small-Signal Current Gain
hfe Small-Signal Current Gain
hie Input Impedance
hre Voltage Feedback Ratio
hoe Output Admittance
NF Noise Figure
VCB = 5.0 V, f = 100 kHz
VEB = 0.5 V, f = 100 kHz
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCE = 10 V, IC = 1.0 mA
f = 1.0 kHz
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 k,
BW = 10 Hz to 15.7 kHz
4.0 pF
8.0 pF
2.5
50 200
1.0 8.0 k
0.1 5.0 x 10-4
1.0 40 µmhos
6.0 dB
SWITCHING CHARACTERISTICS
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCC = 3.0 V, IC = 10 mA,
IB1 = 1.0 mA , Vob ( off ) = 0.5 V
VCC = 3.0 V, IC = 10 mA
IB1 = IB2 = 1.0 mA
35 ns
35 ns
175 ns
50 ns







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