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TK20H50C

Toshiba
Part Number TK20H50C
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 3, 2013
Detailed Description TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK20H50C Switching Regulator Application...
Datasheet PDF File TK20H50C PDF File

TK20H50C
TK20H50C

Overview
TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK20H50C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.
23 Ω (typ.
) z High forward transfer admittance : |Yfs| = 14 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy ...


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