NE3513M04 Datasheet (PDF)





NE3513M04 Datasheet - N-Channel GaAs HJ-FET

NE3513M04   NE3513M04  

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Data Sheet NE3513M04 N-Channel GaAs HJ- FET, X to Ku Band Low Noise and High-Ga in FEATURES R09DS0028EJ0100 Rev.1.00 O ct 18, 2011 • Low noise figure and h igh associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA , f = 12 GHz NF = 0.5 dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 G Hz (Reference Value) • Flat-lead 4-pi n thin-type super minimold (M04)

NE3513M04 Datasheet - N-Channel GaAs HJ-FET

NE3513M04   NE3513M04  
package APPLICATIONS • DBS LNB gain- stage, Mix-stage • Low noise amplifie r for microwave communication system O RDERING INFORMATION Part Number NE3513M 04-T2 Order Number NE3513M04-T2-A Packa ge Quantity Flat-lead 4-pin 3 kpcs/reel thin-type super minimold (M04) 15 kpcs /reel (Pb-Free) Marking V84 Supplying F orm • Embossed tape 8 mm wide • Pi n 1 (Source), Pin 2 (Drain) face the








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