2SK3610-01 Datasheet PDF


Part Number

2SK3610-01

Description

N-CHANNEL SILICON POWER MOSFET

Manufacture

Fuji Electric

Total Page 4 Pages
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Download 2SK3610-01 Datasheet PDF


Features Datasheet pdf 2SK3610-01 FUJI POWER MOSFET 200304 N-C HANNEL SILICON POWER MOSFET Outline Dra wings (mm) TO-220AB Super FAP-G Series Features High speed switching Low on-r esistance No secondary breadown Low dri ving power Avalanche-proof Application s Switching regulators UPS (Uninterrupt ible Power Supply) DC-DC converters Ma ximum ratings and characteristicAbsolut e maximum ratings (Tc=25°C unless othe rwise specified) Item Drain-source volt age Continuous drain current Pulsed dra in current Gate-source voltage Non-repe titive Avalanche current Maximum Avalan che Energy Maximum Drain-Source dV/dt P eak Diode Recovery dV/dt Max. power dis sipation Operating and storage temperat ure range Symbol V DS VDSX *5 ID ID(p.
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2SK3610-01 Datasheet
2SK3610-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250 V
VDSX *5
220 V
Continuous drain current
ID
±14 A
Pulsed drain current
ID(puls]
±56 A
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
14 A
Maximum Avalanche Energy
EAS *1
129.1
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.02
105
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=1.11mH, Vcc=48V,Tch=25°C,See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch<= 150°C *4 VDS <= 250V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=5A VGS=10V
ID=5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=5A
VGS=10V
RGS=10
VCC=125V
ID=10A
VGS=10V
L=1.11mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
250
3.0
5
14
Typ. Max.
10
200
10
785
88
4
12
2.7
22
7.4
21
8
5
5.0
25
250
100
260
1178
132
6
18
4.1
33
11.1
31.5
12
7.5
1.10
0.155
1.05
1.65
Units
V
V
µA
nA
m
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.191 °C/W
62.0 °C/W
1
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