2SK3612-01S Datasheet PDF


Part Number

2SK3612-01S

Description

N-CHANNEL SILICON POWER MOSFET

Manufacture

Fuji Electric

Total Page 4 Pages
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Download 2SK3612-01S Datasheet PDF


Features Datasheet pdf 2SK3612-01L,S,SJ FUJI POWER MOSFET 20030 4 Super FAP-G Series Features High spe ed switching Low on-resistance No secon dary breadown Low driving power Avalanc he-proof N-CHANNEL SILICON POWER MOSFE T Outline Drawings (mm) Applications S witching regulators UPS (Uninterruptibl e Power Supply) DC-DC converters P4 M aximum ratings and characteristicAbsolu te maximum ratings (Tc=25°C unless oth erwise specified) Item Drain-source vol tage Continuous drain current Pulsed dr ain current Gate-source voltage Non-rep etitive Avalanche current Maximum Avala nche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power di ssipation Operating and storage tempera ture range Symbol V DS VDSX *5 ID ID(.
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2SK3612-01S Datasheet
2SK3612-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250 V
VDSX *5
220 V
Continuous drain current
ID
±14 A
Pulsed drain current
ID(puls]
±56 A
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
14 A
Maximum Avalanche Energy
EAS *1
129.1
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/μs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/μs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.02
105
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=1.11mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 250V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=5A VGS=10V
ID=5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=125V
ID=10A
VGS=10V
L=1.11mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/μs Tch=25°C
Min.
250
3.0
5
14
Typ. Max.
10
200
10
785
88
4
12
2.7
22
7.4
21
8
5
5.0
25
250
100
260
1178
132
6
18
4.1
33
11.1
31.5
12
7.5
1.10
0.155
1.05
1.65
Units
V
V
μA
nA
mΩ
S
pF
ns
nC
A
V
μs
μC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.191 °C/W
75.0 °C/W
1
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