PE84140 Datasheet PDF


Part Number

PE84140

Description

Ultra-High Linearity UltraCMOS

Manufacture

Peregrine Semiconductor

Total Page 7 Pages
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Features Datasheet pdf Product Specification PE84140 Product D escription The PE84140 is an ultra-high linearity, passive broadband Quad MOSF ET array with high dynamic range perfor mance capable of operation beyond 6.0 G Hz. This quad array operates with diffe rential signals at all ports (RF, LO, I F), allowing mixers to be built that us e LO powers from -7 dBm to +20 dBm. Typ ical applications range from frequency up/downconversion to phase detection fo r Cellular/PCS Base Stations, Wireless Broadband Communications and STB/Cable modems. The PE84140 is optimized for st ringent military applications. It is ma nufactured on Peregrine’s UltraCMOSâ„ ¢ process, a patented variation of sili con-on-insulator (SOI) technology on a s.
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PE84140 Datasheet
Product Description
The PE84140 is an ultra-high linearity, passive broadband
Quad MOSFET array with high dynamic range performance
capable of operation beyond 6.0 GHz. This quad array
operates with differential signals at all ports (RF, LO, IF),
allowing mixers to be built that use LO powers from -7 dBm to
+20 dBm. Typical applications range from frequency up/down-
conversion to phase detection for Cellular/PCS Base Stations,
Wireless Broadband Communications and STB/Cable
modems.
The PE84140 is optimized for stringent military applications. It
is manufactured on Peregrine’s UltraCMOS™ process, a
patented variation of silicon-on-insulator (SOI) technology on a
sapphire substrate, offering the performance of GaAs with the
economy and integration of conventional CMOS.
Product Specification
PE84140
Ultra-High Linearity UltraCMOSâ„¢
Broadband Quad MOSFET Array
Features
• Ultimate Quad MOSFET array
• Ultra-high linearity, broadband
performance beyond 6.0 GHz
• Ideal for mixer applications
• Up/down conversion
• Low conversion loss
• High LO Isolation
• Optimized for stringent military
applications
Figure 1. Functional Diagram
Figure 2. Package Type
8-lead MSOP
LO IF
RF
Table 1. AC and DC Electrical Specifications @ +25 °C
Symbol
Characteristics
Min Typ
FTYP
Operating Frequency Range1
DC 6.0
VDS Drain-Source Voltage
330
VDS Match
Drain-Source Voltage Match
20
VT Threshold Voltage
-100
R DS Drain-Source ‘ON’ Resistance
8.25
Note 1: Typical untested operating frequency range of Quad MOSFET transistors.
Max
Units
Test Conditions
GHz
mV VGS = +3V, IDS = 40 mA
mV
mV VDS = 0.1V; per ASTM F617-00
Ω VGS = +3V, IDS = 40 mA
Document No. 70-0127-02 │ www.psemi.com
©2003-2006 Peregrine Semiconductor Corp. All rights reserved.
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